The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Jul. 30, 2002
Applicant:
Inventors:
Shing-Chyang Pan, Tainan, TW;
Shwang-Ming Jeng, Hsin-chu, TW;
Chen-Hua Yu, Hsin-chu, TW;
Grace H. Ho, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A method for preventing carbon and nitrogen penetration from a deposited overlayer into a dielectric insulating layer to improve a subsequent photolithographic patterning and anisotropic etching process including providing a semiconductor wafer having a process surface including an exposed dielectric insulating layer; and, subjecting the dielectric insulating layer to a hydrogen containing plasma treatment to form a penetration resistance to one of nitrogen containing and carbon containing species.