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For the Inventor, By the Inventor

Richardson, TX, United States of America

Gordon P Pollack

USPTO Granted Patents = 17

Average Co-Inventor Count = 1.8

ph-index = 11

Forward Citations = 583(Granted Patents)


Location History:

  • Dallas, TX (US) (1990)
  • Richardson, TX (US) (1985 - 2009)

Company Filing History:

goldMedal17 out of 29,279 
 
Texas Instruments Corporation
 patents

Years Active: 1985-2009

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17 patents (USPTO):Explore Patents
1. 7479668 - Source/drain extension implant process for use with short time anneals (2009-01-20),
2. 7297605 - Source/drain extension implant process for use with short time anneals (2007-11-20),
3. 6847089 - Gate edge diode leakage reduction (2005-01-25),
4. 5482871 - Method for forming a mesa-isolated SOI transistor having a split-process (1996-01-09),
5. 5240512 - Method and structure for forming a trench within a semiconductor layer (1993-08-31),
6. 5225697 - dRAM cell and method (1993-07-06),
7. 5185280 - Method of fabricating a SOI transistor with pocket implant and (1993-02-09),
8. 5162882 - Semiconductor over insulator mesa (1992-11-10),
9. 5120675 - Method for forming a trench within a semiconductor layer of material (1992-06-09),
10. 5039621 - Semiconductor over insulator mesa and method of forming the same (1991-08-13),
11. 4956307 - Thin oxide sidewall insulators for silicon-over-insulator transistors (1990-09-11),
12. 4939104 - Method for forming a buried lateral contact (1990-07-03),
13. 4797373 - Method of making dRAM cell with trench capacitor (1989-01-10),
14. 4659426 - Plasma etching of refractory metals and their silicides (1987-04-21),
15. 4580330 - Integrated circuit isolation (1986-04-08),

Title: Innovations by Gordon P. Pollack: A Look at His Impact on Semiconductor Technology

Introduction: Gordon P. Pollack, an accomplished inventor based in Richardson, TX, holds an impressive 17 patents in the field of semiconductor technology. His contributions substantially advance the design and fabrication of metal oxide semiconductor (MOS) devices, driving improvements in performance and efficiency.

Latest Patents: Among his latest patents is a significant innovation titled "Source/drain extension implant process for use with short time anneals." This invention outlines a process for creating a MOS device, which involves forming a gate on a substrate and fabricating a source/drain extension in that substrate. Notably, the source/drain extension is formed using an abnormal-angled dopant implantation followed by a dopant implantation that utilizes different acceleration energies. Moreover, the process includes performing an ultrahigh high-temperature anneal of the substrate, optimizing device performance with specific attention to the portion of the source/drain extension located beneath the gate.

Career Highlights: Currently, Gordon P. Pollack is associated with Texas Instruments Corporation, where his expertise significantly contributes to the development of innovative semiconductor solutions. His extensive background and experience have allowed him to amass a notable number of patents, reflecting his dedication to advancing technology in his field.

Collaborations: Throughout his career, Pollack has worked alongside talented colleagues, including Satwinder S. Malhi and Amitabh Jain. Their collaborative efforts have undoubtedly led to breakthroughs that enhance the capabilities of modern electronic devices.

Conclusion: Gordon P. Pollack's work exemplifies the spirit of innovation within the semiconductor industry. With his 17 patents, he continues to make a lasting impact on technology, paving the way for more efficient and advanced MOS devices. His contributions not only support the current technological landscape but also lay the groundwork for future advancements in semiconductors.

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