The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2009
Filed:
Mar. 08, 2006
Amitabh Jain, Allen, TX (US);
Gordon Pollack, Richardson, TX (US);
Amitabh Jain, Allen, TX (US);
Gordon Pollack, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides, in one embodiment, a process for fabricating a metal oxide semiconductor (MOS) device (). The process includes forming a gate () on a substrate () and forming a source/drain extension () in the substrate (). Forming the source/drain extension () comprises an abnormal-angled dopant implantation () and a dopant implantation (). The abnormal-angled dopant implantation () uses a first acceleration energy and tilt angle of greater than about zero degrees. The dopant implantation () uses a second acceleration energy that is higher than the first acceleration energy. The process also includes performing an ultrahigh high temperature anneal of the substrate (), wherein a portion () of the source/drain extension () is under the gate ().