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For the Inventor, By the Inventor

Staatsburg, NY, United States of America

Glenn A Biery

USPTO Granted Patents = 14

Average Co-Inventor Count = 3.7

ph-index = 6

Forward Citations = 144(Granted Patents)


Location History:

  • Hyde Park, NY (US) (1999)
  • Poughkeepsie, NY (US) (1995 - 2003)
  • Steetsburg, NY (US) (2006)
  • Staatsburg, NY (US) (2005 - 2013)

Company Filing History:

goldMedal14 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 1995-2013

where 'Filed Patents' based on already Granted Patents

14 patents (USPTO):
1. 8383483 - High performance CMOS circuits, and methods for fabricating same (2013-02-26),
2. 8178433 - Methods for the formation of fully silicided metal gates (2012-05-15),
3. 7705405 - Methods for the formation of fully silicided metal gates (2010-04-27),
4. 7473975 - Fully silicided metal gate semiconductor device structure (2009-01-06),
5. 7273777 - Formation of fully silicided (FUSI) gate using a dual silicide process (2007-09-25),
6. 7135398 - Reliable low-k interconnect structure with hybrid dielectric (2006-11-14),
7. 7034400 - Dual damascene interconnect structure using low stress fluorosilicate insulator with copper conductors (2006-04-25),
8. 6933191 - Two-mask process for metal-insulator-metal capacitors and single mask process for thin film resistors (2005-08-23),
9. 6917108 - Reliable low-k interconnect structure with hybrid dielectric (2005-07-12),
10. 6597067 - Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration (2003-07-22),
11. 5952674 - Topography monitor (1999-09-14),
12. 5563517 - Dual channel d.c. low noise measurement system and test methodology (1996-10-08),
13. 5470788 - Method of making self-aligned, lateral diffusion barrier in metal lines (1995-11-28),
14. 5434385 - Dual channel D.C. low noise measurement system and test methodology (1995-07-18),

Title: Glenn A. Biery: Innovator in CMOS Technology

Introduction

Glenn A. Biery is a prominent inventor based in Staatsburg, NY (US), known for his significant contributions to the field of complementary metal-oxide-semiconductor (CMOS) technology. With a total of 14 patents to his name, Biery has made remarkable advancements that have influenced modern semiconductor design and fabrication.

Latest Patents

Among his latest patents, Biery has developed innovative methods for high-performance CMOS circuits. This invention focuses on circuits that incorporate at least a first and a second gate stack, each designed for different device regions within a semiconductor substrate. The first gate stack is specifically tailored for n-FET device regions, while the second is for p-FET device regions. His methods allow for the integrated formation of these gate stacks, enhancing the efficiency and performance of CMOS technology.

Another notable patent involves the formation of fully silicided metal gates. This advanced gate structure features a fully silicided metal gate with a thickness greater than that of the silicided source and drain regions. Biery's methods for creating this advanced gate structure represent a significant step forward in semiconductor technology.

Career Highlights

Glenn A. Biery is currently associated with International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor innovation. His work has not only contributed to the advancement of CMOS technology but has also positioned him as a key figure in the field of semiconductor research and development.

Collaborations

Throughout his career, Biery has collaborated with talented individuals such as Michelle Leigh Steen and Daniel Mark Boyne. These collaborations have fostered an environment of innovation and creativity, leading to groundbreaking advancements in semiconductor technology.

Conclusion

Glenn A. Biery's contributions to CMOS technology and his impressive portfolio of patents underscore his role as a leading inventor in the semiconductor industry. His work continues to influence the future of technology, making significant strides in the field of electronics.

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