The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Jul. 29, 2004
John A. Fitzsimmons, Poughkeepsie, NY (US);
Stephen E. Greco, LaGrangeville, NY (US);
Jia Lee, Beacon, NY (US);
Stephen M. Gates, Ossining, NY (US);
Terry Spooner, New Fairfield, CT (US);
Matthew S. Angyal, Stormville, NY (US);
Habib Hichri, Wappingers Falls, NY (US);
Theordorus E. Standaert, Wappingers Falls, NY (US);
Glenn A. Biery, Staatsburg, NY (US);
John A. Fitzsimmons, Poughkeepsie, NY (US);
Stephen E. Greco, LaGrangeville, NY (US);
Jia Lee, Beacon, NY (US);
Stephen M. Gates, Ossining, NY (US);
Terry Spooner, New Fairfield, CT (US);
Matthew S. Angyal, Stormville, NY (US);
Habib Hichri, Wappingers Falls, NY (US);
Theordorus E. Standaert, Wappingers Falls, NY (US);
Glenn A. Biery, Staatsburg, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.