Giulio Iannuzzi

Title: Innovating Semiconductor Technology: The Contributions of Giulio Iannuzzi

Introduction

Giulio Iannuzzi, an accomplished inventor based in Vimercate, Italy, has made significant strides in the field of semiconductor technology. With a total of two patents, Iannuzzi stands as a prominent figure in the engineering landscape, particularly through his innovative approaches to device construction and fabrication processes.

Latest Patents

Iannuzzi's latest patents reflect his expertise and creative problem-solving abilities in the realm of semiconductor devices. The first patent focuses on a "Process for forming semiconductor device having multi-thickness," which introduces a structure and method for metallization patterns of varying thicknesses on semiconductor devices or integrated circuits. This method involves three layers of metal, reducing the number of essential processing steps. One preferred embodiment utilizes a single metal deposition sequence followed by two etch steps, while another embodiment accommodates thicker metallization with only two depositions and two etch steps.

His second patent, "Fabricating a CMOS transistor having low threshold voltages," describes a method for forming a layer of metal silicide on the gate layer of polycrystalline silicon. This approach allows for simultaneous doping of the active regions and the gate of each transistor in the CMOS pair. The resulting structure features gate electrodes made of polycrystalline silicon covered with metal silicide. Notably, the n-channel transistor's gate is doped with n-type material, while the p-channel transistor's gate incorporates p-type impurities. This innovative fabrication technique enables the production of low threshold voltages for both transistors, even at very high integration densities.

Career Highlights

Giulio Iannuzzi is associated with Sgs Microelettronica Spa, a notable company in the semiconductor industry. His expertise and contributions have not only advanced the company's technological capabilities but have also set new standards in device fabrication methods.

Collaborations

Throughout his career, Iannuzzi has collaborated with talented colleagues in his field, including Giorgio De Santi and Livio Baldi. These partnerships have fostered an environment of innovation and creativity, further enhancing the development of cutting-edge semiconductor technologies.

Conclusion

Giulio Iannuzzi's contributions to the semiconductor industry exemplify the impact of inventive minds on technological advancements. His latest patents not only address current industry challenges but also pave the way for future innovations in semiconductor device fabrication. As he continues to work at Sgs Microelettronica Spa, Iannuzzi remains a valuable asset to the field, driving progress and inspiring future inventors.