Giovanni Mazzeo

Title: Giovanni Mazzeo: Innovator in Memory Device Technology

Introduction

Giovanni Mazzeo is a prominent inventor based in Sacramento, CA, known for his significant contributions to memory device technology. With a total of five patents to his name, he has made remarkable advancements in the field of ferroelectric random-access memory (FeRAM) and flash memory devices.

Latest Patents

One of his latest patents is titled "Voltage management for improved tRP timing for FeRAM devices." This invention encompasses systems and methods related to a memory device that includes a command interface designed to receive read and write commands for executing read and write operations. The memory device features a memory bank with multiple memory cells that utilize ferroelectric layers positioned between plate lines and digit lines. Additionally, it incorporates bank control circuitry that manages the operation of the memory bank, allowing for the programming of both high and low logic values as a write-back to the multiple memory cells during the read and write phases.

Another notable patent is "Suppression of program disturb with bit line and select gate voltage regulation." This patent describes techniques for mitigating program disturb in flash memory devices. In this embodiment, a method is provided for suppressing program disturb in a flash memory array, which consists of rows and columns of memory cells. The memory cells in each row are connected to a source line and a select-gate (SG) line, while those in each column are linked to a respective bit line (BL). During a programming operation, the voltages of the selected SG line and the unselected BL are regulated independently of the power supply voltage, ensuring optimal performance.

Career Highlights

Giovanni has worked with notable companies in the technology sector, including Cypress Semiconductor Corporation and Micron Technology Incorporated. His experience in these organizations has allowed him to refine his expertise in memory technologies and contribute to innovative solutions in the industry.

Collaborations

Throughout his career, Giovanni has collaborated with talented individuals such as Chun Chen and Yoram Betser, further enhancing his work in memory device technology.

Conclusion

Giovanni Mazzeo's contributions to the field of memory devices, particularly through his innovative patents, have established him as a key figure in the industry. His work continues to influence advancements in memory technology, showcasing the importance of innovation in this rapidly evolving field.