Suwon, South Korea

Geum Jong Bae

This inventor holds 27 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Samsung Electronics Co., Ltd., Samsung Electronics Ltd.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Geum Jong Bae. Retrieved from https://idiyas.com/inventor/geum-jong-bae-yz01sw7m

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 96.3

Average Co-Inventor Count = 4.2

ph-index = 5

Forward Citations = 95(Granted Patents)


Location History:

  • Hwaseong-si, KR (2021 - 2023)
  • Suwon-si, KR (2017 - 2024)

Company Filing History:


Years Active: 2017-2026

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Areas of Expertise:
Fin-FET
Multigate Transistor
Internal Spacer
Nanosheets
Channel Regions
Etch Stop Layers
3D Stacking
Thermal Management
Manufacturing Methods
Transistor Fabrication
Source and Drain Contacts
27 patents (USPTO):Explore Patents

Title: Geum Jong Bae: Innovator in Semiconductor Technology

Introduction

Geum Jong Bae, based in Suwon-si, South Korea, is a distinguished inventor with a remarkable portfolio of 25 patents. His innovative work primarily focuses on advancements in semiconductor devices, playing a vital role in the evolution of electronics.

Latest Patents

Among his latest innovations, Geum Jong Bae has developed several patents related to semiconductor devices and their manufacturing methods. One of his notable inventions describes a semiconductor device that incorporates a substrate with a multitude of channel layers stacked upon it. This special design features a gate electrode that surrounds these layers, along with embedded source/drain layers positioned on opposite sides of the gate. The embedded source/drain layers are unique, as they consist of a first region that supports a second region, which comprises multiple layers with varying compositions.

Another significant patent outlines the structure of semiconductor devices, which include a first wire pattern extending in a defined direction on a substrate and a second wire pattern placed atop the first one. This innovative design enables efficient spacing between the wire patterns. Additionally, the devices incorporate a first gate structure that partially envelopes both wire patterns and a second gate structure situated at a distance from the first, ensuring the optimal performance of the semiconductor.

Career Highlights

Geum Jong Bae is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His extensive work and numerous patents have contributed to making Samsung a leader in the electronics sector, particularly in the realm of advanced semiconductors.

Collaborations

Throughout his career, Geum Jong Bae has collaborated with colleagues such as Dong Il Bae and Jung Gil Yang. Working alongside such talented individuals has not only enhanced the innovation process but also fostered a dynamic environment of creativity and technological advancement.

Conclusion

In conclusion, Geum Jong Bae is a pivotal figure in the field of semiconductor inventions. His extensive patent portfolio reflects his dedication to innovation and a profound understanding of semiconductor technology. As he continues to work with industry leaders at Samsung Electronics, there is no doubt that his contributions will significantly impact the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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