The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
Feb. 20, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jung Gil Yang, Hwaseong-si, KR;
Woo Seok Park, Ansan-si, KR;
Dong Chan Suh, Suwon-si, KR;
Seung Min Song, Hwaseong-si, KR;
Geum Jong Bae, Suwon-si, KR;
Dong Il Bae, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); B82Y 10/00 (2011.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); B82Y 10/00 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/161 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/775 (2013.01); H01L 29/78618 (2013.01);
Abstract
A semiconductor device includes a substrate, a plurality of channel layers stacked on the substrate, a gate electrode surrounding the plurality of channel layers, and embedded source/drain layers on opposing sides of the gate electrode. The embedded source/drain layers each have a first region and a second region on the first region. The second region has a plurality of layers having different compositions.