The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Jan. 14, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/02532 (2013.01); H01L 21/31111 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/165 (2013.01); H01L 29/42392 (2013.01); H01L 29/6653 (2013.01); H01L 29/66553 (2013.01); H01L 29/66636 (2013.01);
Abstract
A semiconductor device including a buried insulating layer on a substrate; a lower semiconductor layer on the buried insulating layer, the lower semiconductor layer including a first material; a channel pattern on the lower semiconductor layer, the channel pattern being spaced apart from the lower semiconductor layer and including a second material different from the first material; and a gate electrode surrounding at least a portion of the channel pattern.