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For the Inventor, By the Inventor

Oberhaching, Germany

Gernot Langguth

USPTO Granted Patents = 20 

Average Co-Inventor Count = 3.2

ph-index = 5

Forward Citations = 77(Granted Patents)


Location History:

  • Munich, DE (2010 - 2011)
  • Oberhaching, DE (2009 - 2024)

Company Filing History:

goldMedal19 out of 14,705 
 
Infineon Technologies Ag
 patents
silverMedal1 out of 2,093 
 
Infineon Technologies Austria Ag
 patents

Years Active: 2009-2025

where 'Filed Patents' based on already Granted Patents

20 patents (USPTO):
1. 12278486 - Electrostatic discharge protection for RF pins (2025-04-14),
2. 11967639 - SCR structure for ESD protection in SOI technologies (2024-04-23),
3. 11594878 - System and method for ESD protection (2023-02-28),
4. 11159014 - System and method for ESD protection (2021-10-26),
5. 11088542 - System and method for temperature compensated ESD protection (2021-08-10),
6. 10411006 - Poly silicon based interface protection (2019-09-10),
7. 10361186 - Suppression of parasitic discharge path in an electrical circuit (2019-07-23),
8. 9768766 - Electronic switching element and integrated sensor (2017-09-19),
9. 9197061 - Electrostatic discharge clamping devices with tracing circuitry (2015-11-24),
10. 8976496 - Electrostatic discharge blocking circuits (2015-03-10),
11. 8531807 - ESD clamp adjustment (2013-09-10),
12. 8335064 - ESD clamp adjustment (2012-12-18),
13. 8315024 - Electrostatic discharge protection circuit, integrated circuit and method of protecting circuitry from an electrostatic discharge voltage (2012-11-20),
14. 8198651 - Electro static discharge protection device (2012-06-12),
15. 8154049 - ESD protection apparatus and electrical circuit including same (2012-04-10),

Title: Gernot Langguth: A Pioneer in ESD Protection Technologies

Introduction

Gernot Langguth, based in Oberhaching, Germany, is an influential inventor in the field of semiconductor technology with a remarkable portfolio of 20 patents. His innovative contributions focus primarily on electrostatic discharge (ESD) protection mechanisms, which are essential for the reliability and durability of electronic devices.

Latest Patents

Among his latest patents, Langguth has developed an "Electrostatic discharge protection for RF pins" which details a radio frequency integrated circuit (RFIC) device designed to safeguard RF input/output terminals from ESD events. This invention incorporates a capacitor, a first coil, and a fast transient ESD protection circuit to effectively handle different ESD scenarios, ensuring device longevity.

Another significant innovation is the "SCR structure for ESD protection in SOI technologies." This patent describes a semiconductor device comprising n-doped and p-doped regions that form a diode junction for enhanced ESD protection. This intricate design features segmented anode and cathode regions, optimizing the device's performance in conjunction with the insulating layer.

Career Highlights

Langguth has made substantial contributions while working at leading companies, including Infineon Technologies AG and Infineon Technologies Austria AG. His roles at these organizations have allowed him to advance his research in ESD protection technologies significantly and to apply his findings to real-world applications.

Collaborations

Throughout his career, Gernot Langguth has collaborated with notable colleagues such as Wolfgang Soldner and Christian Cornelius Russ. These partnerships have fostered an exchange of innovative ideas, further driving the field of ESD protection technology forward.

Conclusion

Gernot Langguth continues to impact the semiconductor industry profoundly through his inventive spirit and expertise in ESD protection. His patents not only advance technology but also contribute to the overall safety and efficiency of electronic devices, marking him as a pivotal figure in this essential area of innovation.

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