Oberhaching, Germany

Gernot Langguth

This inventor holds 20 USPTO granted patents and 3 published patent applications. Top assignees: Infineon Technologies Ag, Infineon Technologies Austria Ag. Active years: 2009-2025.

USPTO Granted Patents = 20 

% Patents Active = 75.0

Average Co-Inventor Count = 3.2

ph-index = 5

Forward Citations = 80(Granted Patents)


Location History:

  • Munich, DE (2010 - 2011)
  • Oberhaching, DE (2009 - 2024)

Company Filing History:


Years Active: 2009-2025

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20 patents (USPTO):Explore Patents

Title: Gernot Langguth: A Pioneer in ESD Protection Technologies

Introduction

Gernot Langguth, based in Oberhaching, Germany, is an influential inventor in the field of semiconductor technology with a remarkable portfolio of 20 patents. His innovative contributions focus primarily on electrostatic discharge (ESD) protection mechanisms, which are essential for the reliability and durability of electronic devices.

Latest Patents

Among his latest patents, Langguth has developed an "Electrostatic discharge protection for RF pins" which details a radio frequency integrated circuit (RFIC) device designed to safeguard RF input/output terminals from ESD events. This invention incorporates a capacitor, a first coil, and a fast transient ESD protection circuit to effectively handle different ESD scenarios, ensuring device longevity.

Another significant innovation is the "SCR structure for ESD protection in SOI technologies." This patent describes a semiconductor device comprising n-doped and p-doped regions that form a diode junction for enhanced ESD protection. This intricate design features segmented anode and cathode regions, optimizing the device's performance in conjunction with the insulating layer.

Career Highlights

Langguth has made substantial contributions while working at leading companies, including Infineon Technologies AG and Infineon Technologies Austria AG. His roles at these organizations have allowed him to advance his research in ESD protection technologies significantly and to apply his findings to real-world applications.

Collaborations

Throughout his career, Gernot Langguth has collaborated with notable colleagues such as Wolfgang Soldner and Christian Cornelius Russ. These partnerships have fostered an exchange of innovative ideas, further driving the field of ESD protection technology forward.

Conclusion

Gernot Langguth continues to impact the semiconductor industry profoundly through his inventive spirit and expertise in ESD protection. His patents not only advance technology but also contribute to the overall safety and efficiency of electronic devices, marking him as a pivotal figure in this essential area of innovation.

Profile summary based on public USPTO records.
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