The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
May. 09, 2016
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Gernot Langguth, Oberhaching, DE;
Adrien Ille, Unterhaching, DE;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/12 (2006.01); H01L 25/065 (2006.01); H01L 21/285 (2006.01); H01L 23/60 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0296 (2013.01); H01L 21/28518 (2013.01); H01L 23/60 (2013.01); H01L 25/0657 (2013.01); H01L 27/0292 (2013.01); H01L 27/1207 (2013.01); H01L 23/3128 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 27/0255 (2013.01); H01L 27/0259 (2013.01); H01L 27/0266 (2013.01); H01L 27/0288 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73207 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/0652 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06568 (2013.01); H01L 2924/15311 (2013.01);
Abstract
A semiconductor device includes an active device of a transistor disposed in a semiconductor substrate. An isolation layer is disposed at the semiconductor substrate, and a polysilicon substrate layer is disposed over the isolation layer and the semiconductor substrate. The polysilicon substrate layer includes a semiconductor device region of an interface protection circuit of the transistor.