Dresden, Germany

Gerd Zschaetzsch

USPTO Granted Patents = 5 

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 37(Granted Patents)


Location History:

  • Dresden, DE (US) (2015)
  • Dresden, DE (2015 - 2018)

Company Filing History:


Years Active: 2015-2018

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5 patents (USPTO):

Title: Gerd Zschaetzsch: Innovator in Semiconductor Technology

Introduction

Gerd Zschaetzsch is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on advanced semiconductor device structures and integrated circuits.

Latest Patents

One of his latest patents is for a semiconductor device structure that includes an active region with a semiconductor-on-insulator (SOI) configuration. This device features a lateral double-diffused MOS (LDMOS) type structure, which incorporates a dual ground plane region formed by two counter-doped well regions. The design extends below the semiconductor device, enhancing its performance. Another notable patent involves integrated circuits with FETs having nanowires, detailing methods for producing these circuits through a specific layering process that optimizes germanium concentration.

Career Highlights

Gerd Zschaetzsch is currently employed at GlobalFoundries Inc., a leading company in semiconductor manufacturing. His innovative work has positioned him as a key figure in the development of cutting-edge technologies in this industry.

Collaborations

He has collaborated with notable coworkers such as Stefan Flachowsky and Jan Hoentschel, contributing to various projects that advance semiconductor technology.

Conclusion

Gerd Zschaetzsch's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the development of advanced electronic devices.

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