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For the Inventor, By the Inventor

Dresden, Germany

Gerd Zschaetzsch

This inventor holds 5 USPTO granted patents and 1 published patent application. Top assignee: Globalfoundries Inc.. Active years: 2015-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gerd Zschaetzsch. Retrieved from https://idiyas.com/inventor/gerd-zschaetzsch

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5 

% Patents Active = 60.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 37(Granted Patents)


Location History:

  • Dresden, DE (US) (2015)
  • Dresden, DE (2015 - 2018)

Company Filing History:

goldMedal5 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2015-2018

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5 patents (USPTO):Explore Patents
1. 10056481 - Semiconductor device structure (2018-08-21),
2. 9425318 - Integrated circuits with fets having nanowires and methods of manufacturing the same (2016-08-23),
3. 9218976 - Fully silicided gate formed according to the gate-first HKMG approach (2015-12-22),
4. 9214396 - Transistor with embedded stress-inducing layers (2015-12-15),
5. 9209274 - Highly conformal extension doping in advanced multi-gate devices (2015-12-08),

Title: Gerd Zschaetzsch: Innovator in Semiconductor Technology

Introduction

Gerd Zschaetzsch is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on advanced semiconductor device structures and integrated circuits.

Latest Patents

One of his latest patents is for a semiconductor device structure that includes an active region with a semiconductor-on-insulator (SOI) configuration. This device features a lateral double-diffused MOS (LDMOS) type structure, which incorporates a dual ground plane region formed by two counter-doped well regions. The design extends below the semiconductor device, enhancing its performance. Another notable patent involves integrated circuits with FETs having nanowires, detailing methods for producing these circuits through a specific layering process that optimizes germanium concentration.

Career Highlights

Gerd Zschaetzsch is currently employed at GlobalFoundries Inc., a leading company in semiconductor manufacturing. His innovative work has positioned him as a key figure in the development of cutting-edge technologies in this industry.

Collaborations

He has collaborated with notable coworkers such as Stefan Flachowsky and Jan Hoentschel, contributing to various projects that advance semiconductor technology.

Conclusion

Gerd Zschaetzsch's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the development of advanced electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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