The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Feb. 27, 2015
Applicant:
Globalfoundries, Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES, INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/161 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 27/108 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 29/417 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/02532 (2013.01); H01L 21/324 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 27/10826 (2013.01); H01L 27/10879 (2013.01); H01L 29/0676 (2013.01); H01L 29/161 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/6681 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7843 (2013.01);
Abstract
Integrated circuits and methods for producing the same are provided. A method for producing an integrated circuit includes forming a stack overlying a substrate. The stack includes a silicon germanium layer and a silicon layer, where the silicon germanium layer has a first germanium concentration. The stack is condensed to produce a second germanium concentration in the germanium layer, where the second germanium concentration is greater than the first germanium concentration. A fin is formed that includes the stack, and a gate is formed overlying the fin.