Veldhoven, Netherlands

Georgi Nenchev Nenchev

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignees: Asml Holding N.v., Asml Netherlands B.v.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Georgi Nenchev Nenchev. Retrieved from https://idiyas.com/inventor/georgi-nenchev-nenchev

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 19.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: The Innovations of Georgi Nenchev Nenchev

Introduction

Georgi Nenchev Nenchev is a notable inventor based in Veldhoven, Netherlands. He has made significant contributions to the field of lithography, particularly with his innovative patent that addresses the challenges of particulate debris in radiation systems.

Latest Patents

Nenchev holds a patent for a "Lithographic system provided with a deflection apparatus for changing a trajectory of particulate debris." This invention includes a radiation receiving apparatus designed to receive radiation from a source through an opening. The deflection apparatus within the system is specifically arranged to alter the trajectory of particles arriving at the radiation receiving apparatus, enhancing the efficiency and effectiveness of lithographic processes.

Career Highlights

Throughout his career, Georgi Nenchev has worked with prominent companies in the semiconductor industry, including ASML Holding N.V. and ASML Netherlands B.V. His experience in these organizations has allowed him to develop and refine his innovative ideas in lithography.

Collaborations

Nenchev has collaborated with notable professionals in his field, including Ronald Peter Albright and Kursat Bal. These partnerships have contributed to the advancement of technology in lithographic systems.

Conclusion

Georgi Nenchev Nenchev's contributions to lithography through his innovative patent and collaborations with industry professionals highlight his importance in the field. His work continues to influence advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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