Geoffrey Choh-Fei Yeap

Title: Innovations of Geoffrey Choh-Fei Yeap

Introduction

Geoffrey Choh-Fei Yeap is a prominent inventor based in Sunnyvale, CA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on enhancing the performance and efficiency of ultra-large scale integrated circuit semiconductor devices.

Latest Patents

One of his latest patents is titled "Semiconductor with laterally non-uniform channel doping profile and manufacturing method therefor." This invention describes a method for manufacturing an ultra-large scale integrated circuit semiconductor device that features a laterally non-uniform channel doping profile. The process involves using a Group IV element implant at an angle between 0° to 60° from the vertical to create interstitials in a doped silicon substrate under the gate of the semiconductor device. Following the creation of interstitials, a channel doping implantation is performed using a Group III or Group V element, also implanted at an angle between 0° to 60° from the vertical. A rapid thermal anneal is then utilized to drive the dopant laterally into the channel of the semiconductor device through transient enhanced diffusion.

Career Highlights

Geoffrey Yeap is currently employed at Advanced Micro Devices Corporation, where he continues to innovate in semiconductor technology. His expertise and contributions have positioned him as a key figure in the industry, driving advancements that enhance device performance.

Collaborations

Some of his notable coworkers include Ming-Ren Lin and Zoran Krivokapic, with whom he collaborates on various projects within the semiconductor field.

Conclusion

Geoffrey Choh-Fei Yeap's work in semiconductor technology exemplifies innovation and dedication to advancing the field. His patents reflect a commitment to improving the efficiency and capabilities of integrated circuit devices.