The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Oct. 10, 2000
Geoffrey Choh-Fei Yeap, Sunnyvale, CA (US);
Ognjen Milic, Burlingame, CA (US);
Che-Hoo Ng, San Martin, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An ultra-large scale integrated circuit semiconductor device having a laterally non-uniform channel doping profile is manufactured by using a Group IV element implant at an implant angle of between 0° to 60° from the vertical to create interstitials in a doped silicon substrate under the gate of the semiconductor device. After creation of the interstitials, a channel doping implantation is performed using a Group III or Group V element which is also implanted at an implant angle of between 0° to 60° from the vertical. A rapid thermal anneal is then used to drive the dopant laterally into the channel of the semiconductor device by transient enhanced diffusion.