The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2000
Filed:
Mar. 27, 1998
Akif Sultan, Santa Clara, CA (US);
Geoffrey Choh-Fei Yeap, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of fabricating a transistor is provided. According to the method, a heavy ion is implanted into a silicon substrate so as to amorphize at least a portion of the silicon substrate. The amorphized silicon is substantially free of channels. A dopant is subsequently implanted into the amorphized silicon, and the amorphized silicon substantially contains the implanted dopant. Thereafter, a silicon implanting step is performed to create an excess of vacancies to interstitials within a predetermined range. Enhanced diffusion of the dopant within the predetermined range is mitigated because of the excess of vacancies to interstitials within this predetermined range.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile