Folsom, CA, United States of America

Gaurav Mehta


Average Co-Inventor Count = 3.9

ph-index = 2

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2002-2003

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5 patents (USPTO):Explore Patents

Title: Gaurav Mehta - Innovator in Memory Technology

Introduction

Gaurav Mehta is a prominent inventor based in Folsom, California. He has made significant contributions to the field of memory technology, holding a total of five patents. His work focuses on enhancing the efficiency and performance of memory systems.

Latest Patents

One of his latest patents is titled "Low power precharge scheme for memory bit lines." This innovation introduces a low power memory bit line precharge scheme that optimizes the precharging process during memory operations. Another notable patent is the "Multi-entry register cell," which features multiple memory elements that allow for individual reading of values in response to a single word line assertion.

Career Highlights

Gaurav Mehta has built a successful career at Intel Corporation, where he has been instrumental in developing advanced memory technologies. His expertise in this area has led to the creation of innovative solutions that improve memory performance and reduce power consumption.

Collaborations

Throughout his career, Gaurav has collaborated with talented individuals such as Sudarshan Kumar and Jiann-Cherng James Lan. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Gaurav Mehta's contributions to memory technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in memory

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