The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2003
Filed:
Jun. 29, 2001
Applicant:
Inventors:
Sudarshan Kumar, Fremont, CA (US);
Jiann-Cherng Lan, San Jose, CA (US);
Wenjie Jiang, San Jose, CA (US);
Gaurav Mehta, Folsom, CA (US);
Sadhana Madhyastha, Santa Clara, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ;
Abstract
A low power memory bit line precharge scheme. A memory bit line is coupled to a first read precharge device. A second write precharge device is also coupled to the memory bit line and is to be enabled only in response to a memory write operation. The first read and second write precharge devices are sized such that their combined drive strength is sufficient to precharge the first memory bit line during a precharge period following a write operation.