Billerica, MA, United States of America

Gary Hamm

USPTO Granted Patents = 7 

 

Average Co-Inventor Count = 3.2

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Medford, MA (US) (2008)
  • Billerica, MA (US) (2011 - 2016)

Company Filing History:


Years Active: 2008-2016

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7 patents (USPTO):Explore Patents

Title: Biography of Inventor Gary Hamm

Introduction

Gary Hamm is a distinguished inventor based in Billerica, MA (US), known for his significant contributions to the field of electroplating and semiconductor technology. With a total of 7 patents to his name, Hamm has made notable advancements that have impacted various industries.

Latest Patents

Among his latest innovations is the "Low Internal Stress Copper Electroplating Method," which provides low internal stress copper deposits through varying concentrations of accelerators in the electroplating bath. This method results in a matt copper deposit that enhances the quality of the electroplated surface. Another significant patent is the "Electrochemical Etching of Semiconductors," where semiconductors are etched in solutions containing bifluoride and nickel ions, forming nanometer-range pores on the surface, followed by nickel plating.

Career Highlights

Gary Hamm has built a successful career at Rohm & Haas Electronic Materials LLC, where he has applied his expertise in electroplating and semiconductor technologies. His work has been instrumental in developing innovative solutions that address industry challenges.

Collaborations

Throughout his career, Hamm has collaborated with notable colleagues, including George R Allardyce and David L Jacques, contributing to a dynamic and innovative work environment that fosters creativity and technological advancement.

Conclusion

In summary, Gary Hamm's contributions to the field of electroplating and semiconductor

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