The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Jun. 22, 2013
Applicant:
Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);
Inventors:
Gary Hamm, Billerica, MA (US);
Jason A. Reese, Londonderry, NH (US);
George R. Allardyce, Leicestershire, GB;
Assignee:
Rohm and Haas Electronic Materials LLC, Marlborough, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25D 5/34 (2006.01); H01L 21/288 (2006.01); H01L 21/465 (2006.01); C25D 11/00 (2006.01); C25D 11/02 (2006.01); C25F 3/12 (2006.01); C25F 3/00 (2006.01); H01L 23/00 (2006.01); C25D 11/32 (2006.01); C25D 5/00 (2006.01); C25D 5/12 (2006.01); C25D 7/12 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); C25D 3/12 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); C25D 11/32 (2013.01); C25D 3/12 (2013.01); C25D 5/00 (2013.01); C25D 5/12 (2013.01); C25F 3/12 (2013.01); C25D 7/123 (2013.01); H01L 31/022425 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01);
Abstract
Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.