Gang Mao

Title: Gang Mao - Innovator in Semiconductor Technology

Introduction

Gang Mao is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on innovative methods for manufacturing semiconductor devices, which are crucial for modern electronics.

Latest Patents

One of Gang Mao's latest patents is titled "Method for manufacturing a semiconductor device having a fin located on a substrate." This patent discloses a semiconductor device that includes a substrate with two fins extending along a specific direction. The invention also details an isolation material layer surrounding the fins, which is essential for the device's functionality. Another notable patent is "Fin field-effect transistor and fabrication method thereof." This patent outlines a fabrication process for fin field-effect transistors, detailing the steps involved in creating an insulating layer and isolating the fins on the substrate.

Career Highlights

Gang Mao has worked with leading companies in the semiconductor industry, including Semiconductor Manufacturing International Corporation in Shanghai and Semiconductor Manufacturing International Corporation in Beijing. His experience in these organizations has allowed him to develop and refine his innovative techniques in semiconductor manufacturing.

Collaborations

Throughout his career, Gang Mao has collaborated with notable professionals in the field, including Hai Zhao and Yang Liu. These collaborations have contributed to the advancement of semiconductor technologies and have fostered a spirit of innovation within the industry.

Conclusion

Gang Mao's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices, shaping the future of electronics.