The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Oct. 03, 2017
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Smic Advanced Technology Research & Development (Shanghai) Corporation, Shanghai, CN;
Imec International, Leuven, BE;
Hai Zhao, Shanghai, CN;
Yang Liu, Shanghai, CN;
Gang Mao, Shanghai, CN;
Cheng-Jui Yang, Shanghai, CN;
Yongmeng Lee, Shanghai, CN;
Shaofeng Yu, Shanghai, CN;
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORP., Shanghai, CN;
SMIC ADVANCED TECHNOLOGY RESEARCH & DEVELOPMENT (SHANGHAI) Corp., Shanghai, CN;
IMEC INTERNATIONAL, Leuven, BE;
Abstract
The present disclosure relates to the technical field of semiconductor processes, and discloses a semiconductor device and a manufacturing method therefor. The semiconductor device includes a substrate; two fins located on the substrate and extending along a first direction; an isolation material layer surrounding the fins, comprising a first isolation regions located at an end region between the two fins along the first direction, and a second isolation region located at sides of the fins along a second direction that is different from the first direction, wherein an upper surface of the first isolation region substantially align with an upper surfaces of the fins, and an upper surface of the second isolation region is lower than the upper surface of the fins; and a first insulating layer on the first isolation region.