Fushan Zhang

Title: Fushan Zhang: Innovator in 3D NAND Memory Technology

Introduction

Fushan Zhang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory technology, particularly in the development of 3D NAND memory devices. With a total of five patents to his name, Zhang's work has been instrumental in advancing the capabilities of modern memory storage solutions.

Latest Patents

One of Zhang's latest patents is focused on a 3D NAND memory device and the method of forming the same. In this innovative design, an interconnect structure is formed over a substrate, with a first deck created above the interconnect structure. This first deck consists of alternating first insulating layers and first word line layers, along with a first channel structure that extends through the first stack. The first channel structure features a first channel dielectric region and a first channel layer. The dielectric region is strategically positioned along the sidewalls of the channel structure, ensuring contact with the insulating layers and word line layers. The first channel layer includes a rounded projection that extends away from the interconnect structure's top surface, further enhancing the device's functionality.

Career Highlights

Fushan Zhang is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of memory technology. His expertise and innovative approach have made him a key player in the development of advanced memory solutions.

Collaborations

Zhang collaborates with talented coworkers such as Haohao Yang and Enbo Wang, contributing to a dynamic team focused on cutting-edge research and development in memory technology.

Conclusion

Fushan Zhang's contributions to the field of 3D NAND memory technology exemplify his dedication to innovation and excellence. His patents and ongoing work at Yangtze Memory Technologies Co., Ltd. highlight his role as a leading inventor in the industry.