The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Nov. 16, 2018
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Haohao Yang, Wuhan, CN;
Yong Zhang, Wuhan, CN;
EnBo Wang, Wuhan, CN;
Ruo Fang Zhang, Wuhan, CN;
Fushan Zhang, Wuhan, CN;
Qianbin Xu, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
Embodiments of 3D memory devices with a semiconductor plug protected by a dielectric layer and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including a plurality of interleaved conductor layers and dielectric layers on the substrate, and a memory string extending vertically through the memory stack. The memory string includes a semiconductor plug in a lower portion of the memory string, a protective dielectric layer on the semiconductor plug, and a memory film above the protective dielectric layer and along a sidewall of the memory string.