Fumitaka Amano

Title: Fumitaka Amano: Innovator in Semiconductor Technology

Introduction

Fumitaka Amano is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on advanced methods for enhancing semiconductor device performance.

Latest Patents

Amano's latest patents include innovative techniques for integrating atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes. One notable patent describes the integration of an ALD barrier layer and a CVD Ru liner for void-free copper filling in narrow recessed features of semiconductor devices. This method involves depositing a conformal barrier layer made of TaN or TaAlN, followed by a conformal Ru liner, and ultimately filling the recessed feature with copper metal. Another patent outlines a substrate processing method that passivates a semiconductor substrate's surface with a fluorine-based layer. This technique protects the substrate against oxidation and allows for longer queue times, enhancing the overall efficiency of semiconductor processing.

Career Highlights

Fumitaka Amano is currently employed at Tokyo Electron Limited, a leading company in the semiconductor manufacturing equipment industry. His work at the company has been instrumental in advancing semiconductor technologies and improving manufacturing processes.

Collaborations

Amano has collaborated with notable colleagues, including Kai-Hung Yu and Toshio Hasegawa. These collaborations have contributed to the development of innovative solutions in semiconductor technology.

Conclusion

Fumitaka Amano's contributions to semiconductor technology through his patents and work at Tokyo Electron Limited highlight his role as a key innovator in the field. His advancements in ALD and CVD processes are paving the way for more efficient semiconductor manufacturing.