The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Aug. 07, 2007
Kensaku Narushima, Nirasaki, JP;
Fumitaka Amano, Nirasaki, JP;
Satoshi Wakabayashi, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A barrier layer including a titanium film is formed at a low temperature, and a TiSifilm is self-conformably formed at the interface between the titanium film and the base. In forming the TiSifilm, the following steps are repeated without introducing argon gas: a first step of introducing a titanium compound gas into the processing chamber to adsorb the titanium compound gas onto the silicon surface of a silicon substrate; a second step of stopping introduction of the titanium compound gas into the processing chamber and removing the titanium compound gas remaining in the processing chamber; and a third step of generating plasma in the processing chamber while introducing hydrogen gas into the processing chamber to reduce the titanium compound gas adsorbed on the silicon surface and react it with the silicon in the silicon surface to form the TiSifilm