Tokyo Electron Limited

Fumitaka Amano

Kandabara N Tapily

Tadahiro Ishizaka

Cory Wajda

Kai-Hung Yu

Toshio Hasegawa

Kaoru Maekawa

Kensaku Narushima

Gert J Leusink

Satoshi Wakabayashi

Steven Consiglio

Manabu Oie

Methods for integration of atomic layer deposition (ALD) of barrier layers and chemical vapor deposition (CVD) of Ru liners for Cu filling of narrow recessed features for semiconductor devices are disclosed in several embodiments. According to one embodiment, the method includes providing a substrate containing a recessed feature, depositing a conformal barrier layer by ALD in the recessed feature, where the barrier layer contains TaN or TaAlN, depositing a conformal Ru liner by CVD on the barrier layer, and filling the recessed feature with Cu metal.

Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling

A method for passivating a surface of a semiconductor substrate with fluorine-based layer to protect the surface against oxidation and allow longer queue times. According to one embodiment, the method includes providing a substrate having an oxidized layer formed thereon, replacing the oxidized layer with a fluorine-based layer, exposing the fluorine-based layer to an oxidizing atmosphere, where the fluorine-based layer protects the substrate against oxidation by the oxidizing atmosphere, and removing the fluorine-based layer from the substrate using a plasma process. According to another embodiment, the method includes providing a passivated substrate in a vacuum processing tool, the passivated substrate having a fluorine-based layer thereon that is effective for protecting the passivated substrate against oxidation by an oxidizing atmosphere, removing the fluorine-based layer from the passivated substrate using a microwave plasma process in the vacuum processing tool, thereby forming a clean substrate, and processing the clean substrate under vacuum conditions.

Substrate processing method

A barrier layer including a titanium film is formed at a low temperature, and a TiSifilm is self-conformably formed at the interface between the titanium film and the base. In forming the TiSifilm, the following steps are repeated without introducing argon gas: a first step of introducing a titanium compound gas into the processing chamber to adsorb the titanium compound gas onto the silicon surface of a silicon substrate; a second step of stopping introduction of the titanium compound gas into the processing chamber and removing the titanium compound gas remaining in the processing chamber; and a third step of generating plasma in the processing chamber while introducing hydrogen gas into the processing chamber to reduce the titanium compound gas adsorbed on the silicon surface and react it with the silicon in the silicon surface to form the TiSifilm

Film forming method and substrate processing apparatus

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Tokyo, Japan

Fumitaka Amano