Fu-Sheng Li

Title: Fu-Sheng Li: Innovator in Semiconductor Technology

Introduction

Fu-Sheng Li is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative approach to enhancing device performance.

Latest Patents

One of Fu-Sheng Li's latest patents is titled "Gap patterning for metal-to-source/drain plugs in a semiconductor device." This method involves forming a mask layer on top of a dielectric layer that is situated on first and second source/drain regions. The process includes creating an opening in the mask layer and the dielectric layer to expose portions of the source/drains. Subsequently, a metal layer is filled into the opening, covering the exposed areas. The invention also details the formation of a gap in the metal layer, resulting in a first and second metal contact. This design allows for electrical coupling to the respective source/drains, with the gap separating the contacts by less than nineteen nanometers.

Career Highlights

Fu-Sheng Li is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work focuses on advancing semiconductor fabrication techniques, which are crucial for the development of modern electronic devices.

Collaborations

He collaborates with talented coworkers, including Yu-Lien Huang and Ching-Feng Fu, who contribute to the innovative projects at their company.

Conclusion

Fu-Sheng Li's work in semiconductor technology exemplifies the spirit of innovation that drives advancements in the electronics field. His patents reflect a commitment to improving device efficiency and performance.