Taiwan Semiconductor Manufacturing Comp. Ltd.

Fu-Sheng Li

Yu-Lien Huang

Huan-Just Lin

Ching-Feng Fu

Guan-Ren Wang

Tsai-Jung Ho

Bor Chiuan Hsieh

Guan-Xuan Chen

A method may include forming a mask layer on top of a first dielectric layer formed on a first source/drain and a second source/drain, and creating an opening in the mask layer and the first dielectric layer that exposes portions of the first source/drain and the second source/drain. The method may include filling the opening with a metal layer that covers the exposed portions of the first source/drain and the second source/drain, and forming a gap in the metal layer to create a first metal contact and a second metal contact. The first metal contact may electrically couple to the first source/drain and the second metal contact may electrically couple to the second source/drain. The gap may separate the first metal contact from the second metal contact by less than nineteen nanometers.

Gap patterning for metal-to-source/drain plugs in a semiconductor device

Growing community of inventors

Taichung, Taiwan

Fu-Sheng Li