IDiyas

For the Inventor, By the Inventor

Grenoble, France

Frédéric Mazen

USPTO Granted Patents = 13

 

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 18(Granted Patents)


Location History:

  • Grenoble, FR (2005 - 2023)
  • Saint Egreve, FR (2021 - 2024)

Company Filing History:

goldMedal4 out of 3,559 
 
Commissariat a L'energie Atomique
 patents
silverMedal4 out of 3,854 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
bronzeMedal4 out of 507 
 
Soitec
 patents
4. 4 out of 1,013 
 
Commissariat À L'énergie Atomique Et Aux Énergies Alternatives
 patents
where one patent can have more than one assignee

Years Active: 2005-2025

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13 patents (USPTO):
1. 12469743 - Method for preparing a thin layer that includes forming a weakened zone in a central portion of a donor substrate that does not extend into a peripheral portion of the donor substrate and initiating and propagating a splitting wave in the weakened zone that does completely not propagate through the peripheral portion (2025-11-11),
2. 12002697 - Method for detecting the splitting of a substrate weakened by implanting atomic species (2024-06-04),
3. 11769687 - Method for layer transfer with localised reduction of a capacity to initiate a fracture (2023-09-26),
4. 11670540 - Substrates including useful layers (2023-06-06),
5. 11587826 - Method for suspending a thin layer on a cavity with a stiffening effect obtained by pressurizing the cavity by implanted species (2023-02-21),
6. 11195711 - Healing method before transfer of a semiconducting layer (2021-12-07),
7. 11189519 - Masking a zone at the edge of a donor substrate during an ion implantation step (2021-11-30),
8. 9698289 - Detachment of a self-supporting layer of silicon <100> (2017-07-04),
9. 9201023 - System for measuring a spacing zone in a substrate (2015-12-01),
10. 8778775 - Method for preparing thin GaN layers by implantation and recycling of a starting substrate (2014-07-15),
11. 7943402 - Ion implantation process characterization method (2011-05-17),
12. 7736919 - Method of producing a light-emitting diode comprising a nanostructured PN junction and diode thus obtained (2010-06-15),
13. 6946369 - Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric material (2005-09-20),
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