The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Feb. 04, 2010
Frédéric Milesi, Sassenage, FR;
Frédéric Mazen, Grenoble, FR;
Frédéric Milesi, Sassenage, FR;
Frédéric Mazen, Grenoble, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A method of characterizing an ion implantation process, the method including a first step of producing a PN junction degraded by the ion implantation of species, the species implantation being obtained by the ion implantation process to be characterized; a second step of measuring a parameter representative of an electrical conduction of the degraded PN junction and a dispersion of the parameter on a surface on which the degraded PN junction is produced, the parameter and the dispersion forming a reference parameter and a reference dispersion, the first and second steps being repeated in time so as to follow the evolution of the parameter representative of electrical conduction with relation to the reference parameter and the dispersion of the representative parameter with relation to the reference dispersion.