The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Feb. 15, 2018
Soitec, Bernin, FR;
Commissariat a L'energie Atomique ET Aux Énergies Alternatives, Paris, FR;
Séverin Rouchier, La Tour du Pin, FR;
Frédéric Mazen, Saint Egreve, FR;
Soitec, Bernin, FR;
Commissariat a L'Energie Atomique Et Aux Energies Alternatives, Paris, FR;
Abstract
A process for forming a predetermined separation zone inside a donor substrate, in particular, to be used in a process of transferring a layer onto a carrier substrate comprises an implantation step that is carried out such that the implantation dose in a zone of the edge of the donor substrate is lower than the implantation dose in a central zone of the donor substrate to limit the formation of particles during thermal annealing. The present disclosure also relates to a donor substrate for a process of transferring a thin layer onto a carrier substrate produced by means of the process described above. The present disclosure also relates to a device for limiting an implantation region to a zone of the edge of a donor substrate.