Séverin Rouchier

Title: Séverin Rouchier: Innovator in Ion Implantation Technology

Introduction

Séverin Rouchier is a notable inventor based in La Tour du Pin, France. He has made significant contributions to the field of ion implantation technology, particularly in the area of substrate processing. His innovative approach has led to advancements that are crucial for the semiconductor industry.

Latest Patents

Rouchier holds a patent for a process titled "Masking a zone at the edge of a donor substrate during an ion implantation step." This patent describes a method for forming a predetermined separation zone within a donor substrate. The process is designed to be used in transferring a layer onto a carrier substrate. It involves an implantation step where the dose in the edge zone of the donor substrate is lower than that in the central zone. This technique effectively limits the formation of particles during thermal annealing. The patent also covers a donor substrate produced by this process and a device for limiting the implantation region.

Career Highlights

Throughout his career, Séverin Rouchier has worked with prominent companies such as Soitec and the Commissariat à l'Énergie Atomique et aux Énergies Alternatives. His experience in these organizations has allowed him to refine his expertise in semiconductor technologies and ion implantation processes.

Collaborations

Rouchier has collaborated with notable professionals in his field, including Frédéric Mazen and Alexis Drouin. These partnerships have contributed to the development of innovative solutions in substrate processing.

Conclusion

Séverin Rouchier's contributions to ion implantation technology and his patent innovations highlight his role as a key figure in the semiconductor industry. His work continues to influence advancements in substrate processing techniques.