Yorktown Heights, NY, United States of America

Frank F Fang

This inventor holds 18 USPTO granted patents, primarily in Semiconductor Devices. Top assignee: International Business Machines Corporation. Active years: 1976-1995.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Frank F Fang. Retrieved from https://idiyas.com/inventor/frank-f-fang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.9

ph-index = 9

Forward Citations = 189(Granted Patents)


Company Filing History:


Years Active: 1976-1995

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Areas of Expertise:
Coulomb Blockade Gate
Heterojunction Bipolar Transistor
Narrow Band Gap Transistor
High Sensitivity Magnetic Sensor
Short Channel MOSFET
Thin Film Transistor
Semiconductor Device
Photomultiplier
FET Fabrication
Dynamic Memory Cell
Electrooptical Circuit
Light Emitting Diode
18 patents (USPTO):Explore Patents

Title: Frank F Fang: Innovator in Semiconductor Technology

Introduction

Frank F Fang is a prominent inventor based in Yorktown Heights, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 18 patents. His work focuses on advanced electronic devices that leverage unique properties of materials to enhance performance.

Latest Patents

Among his latest innovations is the "2D/1D junction device as a Coulomb blockade gate." This device is formed by establishing adjacent conductivity regions that transition from wide (2D) to narrow (1D) concerning the electron wavelength at the Fermi level. The junction exhibits a Coulomb blockade effect, allowing it to operate as a small capacitance and conductance for sequentially transferring single electrons. This technology has potential applications in oscillators, digital counting, and memory systems.

Another notable patent is the "modulation doped base heterojunction bipolar transistor." This transistor features a modulation doped heterojunction base formed from a layer of p wide gap semiconductor material and a layer of I narrow gap semiconductor material. The design enhances performance at low temperatures and reduces emitter injection barriers, making it a significant advancement in bipolar transistor technology.

Career Highlights

Frank F Fang is currently employed at the International Business Machines Corporation (IBM), where he continues to innovate in the semiconductor field. His work has been instrumental in developing technologies that push the boundaries of electronic device capabilities.

Collaborations

Throughout his career, Fang has collaborated with notable colleagues, including Kwang K Shih and Marc H Brodsky. These partnerships have contributed to the advancement of semiconductor technologies and the successful development of his patented inventions.

Conclusion

Frank F Fang's contributions to semiconductor technology through his innovative patents have established him as a key figure in the field. His work continues to influence the development of advanced electronic devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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