The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 1985

Filed:

Jun. 22, 1984
Applicant:
Inventors:

Frank F Fang, Yorktown Heights, NY (US);

Bertrand M Grossman, New York, NY (US);

Wei Hwang, Armonk, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 29579 ; 148-15 ; 148187 ; 148D / ; 357 91 ;
Abstract

The combined use of an angularly deposited mask with a subsequent angular conductivity conversion operation extending partially under the mask permits both shorter dimensions and the ability to accommodate the straggle location change when subsequent processing steps occur. The mask is deposited at a low angle with respect to a planar surface, a subsequent conductivity conversion, such as ion implantation, extends under the mask, the mask is removed and a smaller gate is positioned in its location, the gate being smaller than the distance from the source to the point where the conversion extended under the mask, providing thereby an ultra-short gate FET.


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