The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 1995

Filed:

Sep. 16, 1993
Applicant:
Inventors:

Frank F Fang, Yorktown Heights, NY (US);

Richard A Webb, Yorktown Heights, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 30 ; 257-9 ; 257 37 ; 257288 ;
Abstract

A junction is formed by the establishment of first and second adjacent conductivity regions having a transition therebetween from wide (2D) to narrow (1D) with respect to the electron wavelength at the Fermi level. The electrons in the wide region can be propagated at any of a continuum of energies in two dimensions while, in the narrow region, allowable energies become quantized, forming a potential barrier similar to a junction in a tunnel diode. The junction formed in this manner exhibits a Coulomb blockade effect and can be made to operate alternatively as an extremely small capacitance and a conductance to sequentially transfer single electrons, thus forming a Coulomb blockade gate. The Coulomb blockade gate can be used in an oscillator or in digital counting and memory applications.


Find Patent Forward Citations

Fang, Frank. (1995). 2d/1d junction device as a coulomb blockade gate (U.S. Patent No. 5401980). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5401980

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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