Francois Gregoire

Title: Innovations of Francois Gregoire in Microelectronics

Introduction

Francois Gregoire is a notable inventor based in Cupertino, CA, with a focus on advancements in microelectronics. He holds a total of 7 patents that contribute significantly to the field. His work primarily revolves around improving the reliability and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is titled "Local control of electrical and mechanical properties of copper interconnects to achieve stable and reliable via." This invention presents a novel method to avoid voids or solid opens at the bottom of vias without drastically altering the resistivity or parasitic capacitances of the entire metal interconnect system. The process involves implanting and/or alloying an impurity element in the local area of the top surface of a metal interconnect at the bottom of a via. Doping can be performed before or after the formation of the via, which is subsequently filled with a metal such as copper. Another significant patent is "Polysilicon gate doping level variation for reduced leakage current." This method fabricates a transistor on a semiconductor substrate by varying the polysilicon doping level near the edges of a diffusion region compared to the center region of the polysilicon area.

Career Highlights

Francois Gregoire is currently associated with Altera Corporation, where he continues to innovate in the field of microelectronics. His contributions have been pivotal in enhancing the performance and reliability of semiconductor devices.

Collaborations

He has collaborated with notable colleagues such as Peter John McElheny and Yowjuang (Bill) Liu, further enriching his work and expanding the impact of his inventions.

Conclusion

Francois Gregoire's innovative contributions to microelectronics, particularly through his patents, demonstrate his commitment to advancing technology in this critical field. His work continues to influence the development of reliable semiconductor devices.