The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Apr. 22, 2004
Applicants:
Peter Mcelheny, Morgan Hill, CA (US);
Priya Selvaraj, San Jose, CA (US);
Yow-juang (Bill) Liu, San Jose, CA (US);
Francois Gregoire, Cupertino, CA (US);
Inventors:
Peter McElheny, Morgan Hill, CA (US);
Priya Selvaraj, San Jose, CA (US);
Yow-Juang (Bill) Liu, San Jose, CA (US);
Francois Gregoire, Cupertino, CA (US);
Assignee:
Altera Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a transistor on a semiconductor substrate includes varying a polysilicon doping level near a first and second edge of a diffusion region with a polysilicon doping level of a center region of a polysilicon region.