Boise, ID, United States of America

Fernando González

This inventor holds 4 USPTO granted patents. Top assignee: Micron Technology Incorporated. Active years: 2002-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fernando González. Retrieved from https://idiyas.com/inventor/fernando-gonzandaacutelez

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 2

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 2002-2003

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4 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Fernando González in Semiconductor Technology

Introduction

Fernando González, a prominent inventor based in Boise, Idaho, has made significant contributions to the field of semiconductor technology. With a total of four patents to his name, González's innovative work has focused on enhancing the efficiency and performance of semiconductor devices. He is currently employed at Micron Technology Incorporated, a leading company in memory and storage solutions.

Latest Patents

González's latest patents encompass groundbreaking inventions that address critical issues in semiconductor fabrication. One notable patent is for the "Fabrication of Semiconductor Getter Structures by Ion Implantation." This invention provides a method for forming multiple gettering structures within a semiconductive substrate through ion implantation. By employing reactive anisotropic etching to create recesses and following with the implantation of a gettering material, the method effectively reduces the mobility of metallic contaminants within active areas of semiconductive substrates. Not only does this innovation eliminate the need for additional masking procedures and expensive MeV implantation equipment, but it also allows for enhanced performance through thermal processing that induces lateral spread of the gettering structures.

Another significant patent by González is the design of a "Floating Gate Isolation Device," which offers electrical isolation in two dimensions between memory cells in semiconductor devices. This structure incorporates a trench lined with insulating material and filled with polysilicon, effectively creating a floating gate that can inject electrical charge. Such innovation addresses the challenges of isolation in sub-micron spacing within memory cell arrays, ensuring that cells sharing common bitline contacts are efficiently isolated while maintaining performance.

Career Highlights

Throughout his career, Fernando González has been dedicated to advancing semiconductor technology. His work at Micron Technology Incorporated has positioned him at the forefront of innovations that strive to improve memory devices. The patents he has secured not only demonstrate his expertise but also reflect his commitment to pushing the boundaries of what is possible in the semiconductor industry.

Collaborations

González has collaborated with notable colleagues, including D. Mark Durcan and Luan C. Tran. These partnerships have allowed him to contribute to a variety of projects and initiatives aimed at developing next-generation semiconductor technologies. The collaborative approach among innovative minds in Micron Technology has undoubtedly fostered an environment conducive to groundbreaking discoveries.

Conclusion

In conclusion, Fernando González is a notable inventor whose contributions to semiconductor technology have propelled advancements in the field. With a strong portfolio of patents and a commitment to innovation, he continues to influence the trajectory of semiconductor design and memory devices. His work exemplifies the pivotal role of inventors in shaping modern technologies and enhancing the efficiency of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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