Shanghai, China

Feng Rao

USPTO Granted Patents = 5 

Average Co-Inventor Count = 5.7

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2014-2019

where 'Filed Patents' based on already Granted Patents

5 patents (USPTO):

Title: The Innovations of Feng Rao in Phase Change Memory Materials

Introduction

Feng Rao is a prominent inventor based in Shanghai, China, known for his significant contributions to the field of phase change memory materials. With a total of five patents to his name, he has made remarkable advancements that enhance the performance and reliability of memory storage technologies.

Latest Patents

Feng Rao's latest patents include innovative materials designed for phase change memory applications. One of his notable inventions is a phase change material with the chemical formula ScGeSbTe, which allows for repeated phase changes. This material can switch between high and low resistance states when subjected to a pulse electrical signal, meeting the essential requirements for storage materials in phase change memory. Another significant patent involves the Sb—Te—Ti phase-change memory material, which is created by doping an Sb—Te phase-change material with Ti. This innovation improves crystallization temperature, retention, and thermal stability, making it highly applicable in phase-change memory technologies.

Career Highlights

Feng Rao is affiliated with the Chinese Academy of Sciences, where he conducts research and development in advanced materials. His work has been instrumental in pushing the boundaries of memory technology, contributing to the evolution of data storage solutions.

Collaborations

Feng Rao collaborates with esteemed colleagues such as Zhitang Song and Yuefeng Gong, who share his passion for innovation in material science. Their combined expertise fosters a dynamic research environment that leads to groundbreaking discoveries.

Conclusion

Feng Rao's contributions to phase change memory materials exemplify the spirit of innovation in modern technology. His patents not only advance the field but also pave the way for future developments in memory storage solutions.

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