The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Jun. 24, 2011
Applicants:

Cheng Peng, Shanghai, CN;

Liangcai Wu, Shanghai, CN;

Feng Rao, Shanghai, CN;

Zhitang Song, Shanghai, CN;

BO Liu, Shanghai, CN;

Xilin Zhou, Shanghai, CN;

Min Zhu, Shanghai, CN;

Inventors:

Cheng Peng, Shanghai, CN;

Liangcai Wu, Shanghai, CN;

Feng Rao, Shanghai, CN;

Zhitang Song, Shanghai, CN;

Bo Liu, Shanghai, CN;

Xilin Zhou, Shanghai, CN;

Min Zhu, Shanghai, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/02 (2006.01); G11C 11/56 (2006.01); C23C 14/06 (2006.01); C23C 14/35 (2006.01); C01B 19/00 (2006.01); C23C 14/14 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/56 (2013.01); C23C 14/0623 (2013.01); C23C 14/35 (2013.01); C01B 19/007 (2013.01); C23C 14/14 (2013.01); H01L 45/06 (2013.01); H01L 45/144 (2013.01); G11C 13/0004 (2013.01);
Abstract

The present invention discloses an Al—Sb—Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Al(SbTe), where 0<x≦0.85, 0.67≦y≦7. Said material is electrically driven from outside. By adjusting the content of three elements in the mixture, storage materials with different crystallization temperatures, melting temperatures and activation energies of crystallization can be achieved. Any two elements of aluminum, antimony and tellurium can be bonded to each other, so the adjustability is very high, maintaining the phase change properties in a wide range. Compared with conventional GeSbTe, the materials achieved by properly adjusting the element ratio in Al(SbTe)have higher crystallization temperatures, better thermal stability and data retention, and lower melting temperatures, while at the same time inheriting the fast phase change capability from SbTe. Moreover, as a common element used in microelectronics, aluminum (Al) features mature technology and nice compatibility with CMOS.


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