Chinese Academy of Sciences

Feng Rao

Zhitang Song

Min Zhu

Bo Tong Liu

Cheng Peng

Liangcai Wu

Yuefeng Gong

Xilin Zhou

Kun Ren

Yong Wang

Songlin Feng

Wanchun Ren

Bangming Chen

Yong Kang

Keyuan Ding

A phase change material for a phase change memory and a preparing method thereof. The phase change material for a phase change memory has a chemical formula of ScGeSbTe, wherein 0&#x2264;x&#x2264;60, 0&#x2264;y&#x2264;90, 0&#x3c;z&#x2264;65, 0&#x3c;100-x-y-z&#x3c;100. The phase change material for a phase change memory according to the present invention is capable of repeatedly changing phases. The ScGeSbTehas two different resistance value states, i.e., a high resistance state and a low resistance state, and a reversible transformation between the high resistance state and the low resistance state can be achieved by being applied a pulse electrical signal thereto, which satisfies basic requirements of a storage material for the phase change memory.

Phase change material for phase change memory and preparation method therefor

An Sb&#x2014;Te&#x2014;Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb&#x2014;Te&#x2014;Ti phase-change memory material is formed by doping an Sb&#x2014;Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb&#x2014;Te&#x2014;Ti phase-change memory material has a chemical formula SbTeTi, where 0&#x3c;x&#x3c;80 and 0&#x3c;y&#x3c;100&#x2212;x. When the Sb&#x2014;Te&#x2014;Ti phase-change memory material is a Ti&#x2014;SbTephase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. The crystallization temperature of the Sb&#x2014;Te&#x2014;Ti phase-change memory material is significantly risen, retention is improved, and thermal stability is enhanced; meanwhile, the amorphous state resistance decreases, and the crystalline state resistance increases; and the Sb&#x2014;Te&#x2014;Ti phase-change memory material has wide application in phase-change memories.

Sb&#x2014;Te&#x2014;Ti phase-change memory material and Ti&#x2014;Sb2Te3 phase-change memory material

The present invention provides a phase-change storage unit for replacing DRAM and FLASH and a manufacturing method thereof, and the phase-change storage unit includes a phase-change material layer and a cylindrical lower electrode being in contact with and located below the phase-change material layer, where the phase-change material layer is formed by connecting a side wall layer and a round bottom layer, forms a hollow cylinder or hollow inverted conical frustum having an opening at an upper part, and the hollow cylinder or hollow inverted conical frustum is internally filled with a medium layer. The present invention adopts the means of preparing a phase-change material layer with a vertical side wall layer and a phase-change material layer with a slant side wall layer, in which a medium material is filled, and adopts the means of a small electrode, so as to reduce the thickness of the phase-change material layer, thereby reducing the phase-change region during the operation, improving the heat stability and the phase-change speed of the phase-change material layer, and finally achieving purposes of reducing the operating power consumption, improving the device data holding capability, increasing the operating speed of the device, and increasing the number of times of cyclic operating of the device.

Phase-change storage unit for replacing DRAM and FLASH and manufacturing method thereof

The present invention provides a phase-change storage unit containing a TiSiN material layer and a method for preparing the same. The phase-change storage unit includes a phase-change material layer and a lower electrode located there below, the phase-change material layer and the lower electrode are connected by a TiSiN material layer, the lower electrode includes a bottom and a sheet side connected to the bottom, the sheet side is perpendicular to the bottom to form a blade structure, and the top of the sheet side contacts the TiSiN material layer. The present invention adopts annealing to increase the grain size of the electrode so as to reduce the overall resistance of the device and form a TiSiN material layer on the top of the lower electrode so as to reduce the effective operation region. The phase-change storage unit of the present invention is applied to a phase-change memory to achieve the advantages such as low power consumption, high density and high data retention performance.

Phase-change storage unit containing TiSiN material layer and method for preparing the same

The present invention discloses an Al&#x2014;Sb&#x2014;Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Al(SbTe), where 0&#x3c;x&#x2266;0.85, 0.67&#x2266;y&#x2266;7. Said material is electrically driven from outside. By adjusting the content of three elements in the mixture, storage materials with different crystallization temperatures, melting temperatures and activation energies of crystallization can be achieved. Any two elements of aluminum, antimony and tellurium can be bonded to each other, so the adjustability is very high, maintaining the phase change properties in a wide range. Compared with conventional GeSbTe, the materials achieved by properly adjusting the element ratio in Al(SbTe)have higher crystallization temperatures, better thermal stability and data retention, and lower melting temperatures, while at the same time inheriting the fast phase change capability from SbTe. Moreover, as a common element used in microelectronics, aluminum (Al) features mature technology and nice compatibility with CMOS.

Al-Sb-Te phase change material used for phase change memory and fabrication method thereof

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Shanghai, China

Feng Rao