The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Aug. 23, 2016
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, CN;
Feng Rao, Shanghai, CN;
Zhitang Song, Shanghai, CN;
Keyuan Ding, Shanghai, CN;
Yong Wang, Shanghai, CN;
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCE, Changning District, Shanghai, CN;
Abstract
A phase change material for a phase change memory and a preparing method thereof. The phase change material for a phase change memory has a chemical formula of ScGeSbTe, wherein 0≤x≤60, 0≤y≤90, 0<z≤65, 0<100-x-y-z<100. The phase change material for a phase change memory according to the present invention is capable of repeatedly changing phases. The ScGeSbTehas two different resistance value states, i.e., a high resistance state and a low resistance state, and a reversible transformation between the high resistance state and the low resistance state can be achieved by being applied a pulse electrical signal thereto, which satisfies basic requirements of a storage material for the phase change memory.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile