This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Chinese Academy of Sciences. Active years: 2019.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2019
Title: Keyuan Ding: Innovator in Phase Change Materials
Introduction
Keyuan Ding is a prominent inventor based in Shanghai, China. He is known for his significant contributions to the field of phase change materials, particularly in the development of materials for phase change memory applications. His innovative work has led to advancements in data storage technologies.
Latest Patents
Keyuan Ding holds a patent for a phase change material designed for phase change memory. The patent describes a phase change material with the chemical formula ScGeSbTe, where specific ranges for the elements are defined. This material is capable of repeatedly changing phases and exhibits two distinct resistance states: a high resistance state and a low resistance state. The reversible transformation between these states can be achieved through the application of a pulse electrical signal, meeting the essential requirements for storage materials in phase change memory.
Career Highlights
Keyuan Ding is affiliated with the Chinese Academy of Sciences, where he conducts research and development in materials science. His work has garnered attention for its potential applications in improving data storage technologies. His innovative approach to phase change materials has positioned him as a key figure in this area of research.
Collaborations
Keyuan Ding has collaborated with notable colleagues, including Feng Rao and Zhitang Song. These collaborations have contributed to the advancement of research in phase change materials and their applications.
Conclusion
Keyuan Ding's contributions to the field of phase change materials highlight his role as an innovator in data storage technology. His patent for a phase change material demonstrates the potential for advancements in memory applications. His work continues to influence the development of new technologies in this critical area.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
