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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9276202 B1

PDFFull Text
Date of Patent:
Mar. 01, 2016

Filed:

Dec. 27, 2012

Phase-change storage unit containing tisin material layer and method for preparing the same

Applicant:

Shanghai Institute of Microsystem and Information Technology, Chinese Academy, Shanghai, CN;

Inventors:

Zhitang Song, Shanghai, CN;

Yuefeng Gong, Shanghai, CN;

Feng Rao, Shanghai, CN;

Bo Liu, Shanghai, CN;

Yong Kang, Shanghai, CN;

Bangming Chen, Shanghai, CN;

Assignee:

SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES, Changing District Shanghai, CN;

Attorneys:

Tianhua Gu

Global IP Services

Primary Examiner:

Caridad Everhart

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1226 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/144 (2013.01); H01L 45/16 (2013.01); H01L 45/1608 (2013.01);
Abstract

The present invention provides a phase-change storage unit containing a TiSiN material layer and a method for preparing the same. The phase-change storage unit includes a phase-change material layer and a lower electrode located there below, the phase-change material layer and the lower electrode are connected by a TiSiN material layer, the lower electrode includes a bottom and a sheet side connected to the bottom, the sheet side is perpendicular to the bottom to form a blade structure, and the top of the sheet side contacts the TiSiN material layer. The present invention adopts annealing to increase the grain size of the electrode so as to reduce the overall resistance of the device and form a TiSiN material layer on the top of the lower electrode so as to reduce the effective operation region. The phase-change storage unit of the present invention is applied to a phase-change memory to achieve the advantages such as low power consumption, high density and high data retention performance.

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Song, Zhitang. (2016). Phase-change storage unit containing tisin material layer and method for preparing the same (U.S. Patent No. 9276202). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9276202

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