Shanghai, China

Yong Kang

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Chinese Academy of Sciences. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yong Kang. Retrieved from https://idiyas.com/inventor/yong-kang-mcl00443

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Yong Kang - Innovator in Phase-Change Memory Technology

Introduction

Yong Kang is a notable inventor based in Shanghai, China. He has made significant contributions to the field of phase-change memory technology. His innovative work focuses on enhancing the performance and efficiency of storage units.

Latest Patents

Yong Kang holds a patent for a "Phase-change storage unit containing TiSiN material layer and method for preparing the same." This invention provides a phase-change storage unit that includes a phase-change material layer and a lower electrode. The unique aspect of this design is the incorporation of a TiSiN material layer that connects the phase-change material layer and the lower electrode. The design aims to reduce the overall resistance of the device while improving its operational efficiency. The phase-change storage unit is particularly beneficial for applications in phase-change memory, offering advantages such as low power consumption, high density, and excellent data retention performance.

Career Highlights

Yong Kang is affiliated with the Chinese Academy of Sciences, where he conducts research and development in advanced materials and memory technologies. His work has positioned him as a key figure in the innovation of phase-change memory solutions.

Collaborations

Yong Kang collaborates with esteemed colleagues, including Zhitang Song and Yuefeng Gong. Their combined expertise contributes to the advancement of research in the field of memory technology.

Conclusion

Yong Kang's contributions to phase-change memory technology exemplify the impact of innovative thinking in the field of electronics. His patent reflects a commitment to improving data storage solutions, making significant strides in efficiency and performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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