Feng-Ming Lee

Title: Innovations of Feng-Ming Lee

Introduction

Feng-Ming Lee is a prominent inventor based in Changhua, Taiwan. He has made significant contributions to the field of programmable metallization devices, holding a total of 9 patents. His work focuses on advancing data storage technologies through innovative designs and methodologies.

Latest Patents

One of his latest patents is for a unipolar programmable metallization cell. This device consists of a first electrode, a second electrode, and a dielectric layer, along with a conductive ion-barrier layer and an ion-supplying layer arranged in series. In operation, a conductive bridge is formed or destroyed in the dielectric layer to represent a data value using bias voltages of the same polarity. This allows for the use of diode access devices. To create a conductive bridge, a sufficient bias is applied to enable ions to penetrate the conductive ion-barrier layer into the dielectric layer, forming filaments or bridges. Conversely, to destroy the conductive bridge, a bias of the same polarity is applied, causing current to flow through the structure while blocking ion flow, leading to disintegration of the bridge due to Joule heating.

Another notable patent is for a programmable metallization cell with two dielectric layers. This device also comprises a first electrode, a second electrode, a first dielectric layer, a second dielectric layer, and an ion-supplying layer. In this configuration, a conductive bridge is formed or destroyed in the first dielectric layer to represent a data value. During the read operation, a read bias is applied to create a transient bridge in the second dielectric layer, establishing a conductive path through the cell if the bridge exists in the first dielectric layer. If the bridge is absent, no conductive path is formed. Upon removal of the read bias voltage, any transient bridge formed in the second dielectric layer is destroyed, while the bridge in the first dielectric layer remains intact.

Career Highlights

Feng-Ming Lee is currently employed at Macronix International Co., Ltd., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in developing advanced data storage solutions that enhance performance and reliability.

Collaborations

He has collaborated with notable colleagues, including Wei-Chih Chien and Yu-Yu Lin, contributing to various projects that push the boundaries of current technology.

Conclusion

Feng-Ming Lee's contributions