The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2012

Filed:

Jan. 25, 2010
Applicants:

Yu-yu Lin, Taipei, TW;

Feng-ming Lee, Changhua, TW;

Yi-chou Chen, Hsinchu, TW;

Inventors:

Yu-Yu Lin, Taipei, TW;

Feng-Ming Lee, Changhua, TW;

Yi-Chou Chen, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/18 (2006.01); H01L 21/06 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A programmable metallization device, comprises a first electrode; a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting bridge therethrough; an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer; a conductive ion buffer layer between the ion-supplying layer and the memory layer, and which allows diffusion therethrough of said ions; and a second electrode electrically coupled to the ion-supplying layer. Circuitry is coupled to the device to apply bias voltages to the first and second electrodes to induce creation and destruction of conducting bridges including the first metal element in the memory layer. The ion buffer layer can improve retention of the conducting bridge by reducing the likelihood that the first metallic element will be absorbed into the ion supplying layer.


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